Antenna-integrated radio frequency module

ABSTRACT

An antenna-integrated radio frequency (RF) module includes a multilayer substrate disposed between an integrated chip (IC) and patch antennas, signal vias, and ground members. The IC is configured to generate RF signals. The signal vias are configured to connect and transmit/receive the RF signals from each of the patch antennas to the IC. The ground members are disposed on an outer surface layer and intermediate surface layers of the multilayer substrate to surround each of the patch antennas and the signal vias.

CROSS-REFERENCE TO RELATED APPLICATION(S)

This application is a Continuation Application of U.S. patentapplication Ser. No. 15/817,329 filed on Nov. 20, 2017, which claimsbenefit under 35 USC 119(a) of Korean Patent Application Nos.10-2017-0010490 filed on Jan. 23, 2017 and 10-2017-0070621 filed on Jun.7, 2017 in the Korean Intellectual Property Office, the entiredisclosure of which is incorporated herein by reference for allpurposes.

BACKGROUND 1. Field

The present disclosure relates to an antenna-integrated radio frequency(RF) module.

2. Description of Related Art

In recent years, millimeter wave (mmWave) communications, including 5thgeneration communications, have been actively researched, and researchinto the commercialization of a radio frequency (RF) module able tosmoothly implement millimeter wave communications has also been activelyconducted.

Miniaturization of RF modules is necessary for the commercialization ofthe RF module, but may cause deterioration in radiation characteristicsand signal transmission efficiency of an antenna. Such a phenomenon mayoccur significantly in an RF module using a high frequency RF signalsuch as a signal used for 5th communications or millimeter wavecommunications.

SUMMARY

This Summary is provided to introduce a selection of concepts in asimplified form that are further described below in the DetailedDescription. This Summary is not intended to identify key features oressential features of the claimed subject matter, nor is it intended tobe used as an aid in determining the scope of the claimed subjectmatter.

In one general embodiment, an antenna-integrated radio frequency (RF)module includes a multilayer substrate, an integrated chip (IC), patchantennas, a first ground member, a second ground member, and a thirdground member. The integrated chip (IC) is disposed on an outer surfaceof the multilayer substrate, and configured to generate RF signals. Thepatch antennas are disposed on a first layer of the multilayersubstrate, and configured to receive and/or transmit the RF signals fromsignal vias disposed to penetrate through second and third layers of themultilayer substrate. The first ground member is disposed on the firstlayer, and configured to have first penetration regions surround each ofthe patch antennas. The second ground member disposed on the secondlayer, and configured to have second penetration regions surroundingeach of the signal vias. The third ground member is disposed on thethird layer, and configured to have third penetration regionssurrounding each of the signal vias. Each of the first and secondpenetration regions is larger than each of the patch antennas, each ofthe third penetration regions is smaller than each of the patchantennas. The first, second, and third layers of the multilayersubstrate are sequentially disposed.

The first ground member may include a first ground via group disposed tosurround each of the first penetration regions, and the second groundmember may include a second ground via group disposed to surround eachof the second penetration regions.

The third ground member may include a third ground via group disposed ata position corresponding to a position of the second ground via group.

The antenna-integrated RF module may further include a second-secondground member disposed between the second ground member and the firstground member, and configured to have a form similar to the secondground member.

A fourth layer and a fifth layer of the multilayer substrate may bedisposed between the third layer and the IC. The second signal vias maybe disposed to penetrate through the fifth layer, and configured toreceive the RF signals from the IC. RF lines may be disposed on thefourth layer, and configured to receive the RF signals from the secondsignal vias.

A fourth ground member may be disposed on the fourth layer, andconfigured to have fourth penetration regions surrounding each of the RFlines. The fourth ground member may include a fourth ground via groupdisposed to surround each of the fourth penetration regions. The thirdground member may include a third ground via group disposed at aposition corresponding to a position of the fourth ground via group.

A fifth ground member may be disposed on the fifth layer, and configuredto surround each of the second signal vias. A power ground member may bedisposed on the fifth layer, and surrounded by the fifth ground member.The power ground member may be connected to the IC.

A sixth layer and a seventh layer may be disposed between the fifthlayer and the IC. An analog line may be disposed on the sixth layer, afirst analog ground member may be disposed on the fifth layer at aposition corresponding to a position of the analog line, and a sixthground member may be disposed on the sixth layer to surround the analogline. A second analog ground member may be disposed on the seventh layerat a position corresponding to the position of the analog line. Ananalog via may electrically connect the analog line and the IC to eachother.

The patch antennas may inlcude sixteen patch antennas disposed in a 4×4matrix and each having a similar form as the other, and the signal viasmay include thirty-two signal vias with each patch antenna having twosecond signal vias.

When some among the patch antennas are rotated by 90° or 180°, aconnection point to the signal via of each of the patch antennas may bethe same as other patch antennas.

The antenna-integrated RF module may further include a sub-substratedisposed on the surface of the multilayer substrate to surround the IC.The sub-substrate includes solder balls electrically connecting betweenthe IC and the sub-substrate.

The antenna-integrated RF module may further include a passive elementdisposed between the sub-substrate and the IC, wherein the surface ofthe multilayer substrate has a first trench disposed to surround the IC,and a second trench disposed to surround the first trench and surroundedby the sub-substrate.

The IC may convert signals received through the solder balls into the RFsignals of a millimeter wave (mmWave) band.

In another general aspect, an antenna-integrated radio frequency (RF)module includes a multilayer substrate disposed between an integratedchip (IC) and patch antennas, signal vias, and ground members. The IC isconfigured to generate RF signals. The signal vias are configured toconnect and transmit/receive the RF signals from each of the patchantennas to the IC. The ground members are disposed on an outer surfacelayer and intermediate surface layers of the multilayer substrate tosurround each of the patch antennas and the signal vias.

The patch antennas may be disposed on a first layer of the multilayersubstrate opposite the outer surface where the IC is disposed.

A first ground member of the ground members may be disposed on the firstlayer, and configured to have first penetration regions surround each ofthe patch antennas. A second ground member of the ground members may bedisposed on a second layer of the multilayer substrate, and configuredto have second penetration regions surrounding each of the signal vias.A third ground member of the ground members may be disposed on the thirdlayer of the multilayer substrate, and configured to have thirdpenetration regions surrounding each of the signal vias.

Each of the first and second penetration regions may be larger than eachof the patch antennas. Each of the third penetration regions may besmaller than each of the patch antennas.

The IC and patch antennas may be configured to transmit/receive the RFsignals of a millimeter wave (mmWave) band.

Other features and aspects will be apparent from the following detaileddescription, the drawings, and the claims.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a view illustrating an antenna-integrated RF module accordingto an example in the present disclosure;

FIG. 2 is a view illustrating a first layer of a substrate of theantenna-integrated RF module in FIG. 1.

FIG. 3 is a view illustrating a ground via group of the first layer ofthe substrate in FIG. 2.

FIG. 4 is a view illustrating a central region of a second layer of thesubstrate of the antenna-integrated RF module in FIG. 1.

FIG. 5 is a view illustrating a ground via group of the second layer ofthe substrate in FIG. 4.

FIG. 6 is a view illustrating a central region of a second-second layerof the substrate of the antenna-integrated RF module in FIG. 1.

FIG. 7 is a view illustrating a central region of a third layer of thesubstrate of the antenna-integrated RF module in FIG. 1.

FIG. 8 is a view illustrating a central region of a fourth layer of thesubstrate of the antenna-integrated RF module in FIG. 1.

FIG. 9 is a view illustrating a ground via group of the fourth layer ofthe substrate in FIG. 8.

FIG. 10 is a view illustrating a central region of a second-fourth layerof the substrate of the antenna-integrated RF module in FIG. 1.

FIG. 11 is a view illustrating a fifth layer of the substrate of theantenna-integrated RF module in FIG. 1.

FIG. 12 is a view illustrating a sixth layer of the substrate of theantenna-integrated RF module in FIG. 1.

FIG. 13 is a view illustrating a seventh layer of the substrate of theantenna-integrated RF module in FIG. 1.

FIG. 14 is a view illustrating a surface of the substrate in FIG. 1 onwhich an IC is disposed.

FIG. 15 is a view illustrating an arrangement of a sub-substrate.

Throughout the drawings and the detailed description, the same referencenumerals refer to the same elements. The drawings may not be to scale,and the relative size, proportions, and depiction of elements in thedrawings may be exaggerated for clarity, illustration, and convenience.

DETAILED DESCRIPTION

The following detailed description is provided to assist the reader ingaining a comprehensive understanding of the methods, apparatuses,and/or systems described herein. However, various changes,modifications, and equivalents of the methods, apparatuses, and/orsystems described herein will be apparent after an understanding of thedisclosure of this application. For example, the sequences of operationsdescribed herein are merely examples, and are not limited to those setforth herein, but may be changed as will be apparent after anunderstanding of the disclosure of this application, with the exceptionof operations necessarily occurring in a certain order. Also,descriptions of features that are known in the art may be omitted forincreased clarity and conciseness.

The features described herein may be embodied in different forms, andare not to be construed as being limited to the examples describedherein. Rather, the examples described herein have been provided merelyto illustrate some of the many possible ways of implementing themethods, apparatuses, and/or systems described herein that will beapparent after an understanding of the disclosure of this application.

Throughout the specification, when an element, such as a layer, region,or substrate, is described as being “on,” “connected to,” or “coupledto” another element, it may be directly “on,” “connected to,” or“coupled to” the other element, or there may be one or more otherelements intervening therebetween. In contrast, when an element isdescribed as being “directly on,” “directly connected to,” or “directlycoupled to” another element, there can be no other elements interveningtherebetween.

As used herein, the term “and/or” includes any one and any combinationof any two or more of the associated listed items.

Although terms such as “first,” “second,” and “third” may be used hereinto describe various members, components, regions, layers, or sections,these members, components, regions, layers, or sections are not to belimited by these terms. Rather, these terms are only used to distinguishone member, component, region, layer, or section from another member,component, region, layer, or section. Thus, a first member, component,region, layer, or section referred to in examples described herein mayalso be referred to as a second member, component, region, layer, orsection without departing from the teachings of the examples.

Spatially relative terms such as “above,” “upper,” “below,” and “lower”may be used herein for ease of description to describe one element'srelationship to another element as shown in the figures. Such spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. For example, if the device in the figures is turned over,an element described as being “above” or “upper” relative to anotherelement will then be “below” or “lower” relative to the other element.Thus, the term “above” encompasses both the above and below orientationsdepending on the spatial orientation of the device. The device may alsobe oriented in other ways (for example, rotated 90 degrees or at otherorientations), and the spatially relative terms used herein are to beinterpreted accordingly.

The terminology used herein is for describing various examples only, andis not to be used to limit the disclosure. The articles “a,” “an,” and“the” are intended to include the plural forms as well, unless thecontext clearly indicates otherwise. The terms “comprises,” “includes,”and “has” specify the presence of stated features, numbers, operations,members, elements, and/or combinations thereof, but do not preclude thepresence or addition of one or more other features, numbers, operations,members, elements, and/or combinations thereof.

Due to manufacturing techniques and/or tolerances, variations of theshapes shown in the drawings may occur. Thus, the examples describedherein are not limited to the specific shapes shown in the drawings, butinclude changes in shape that occur during manufacturing.

The features of the examples described herein may be combined in variousways as will be apparent after an understanding of the disclosure ofthis application. Further, although the examples described herein have avariety of configurations, other configurations are possible as will beapparent after an understanding of the disclosure of this application.

FIG. 1 is a view illustrating an antenna-integrated RF module accordingto an example in the present disclosure.

Referring to FIG. 1, an antenna-integrated RF module according to anexample in the present disclosure includes at least a portion of asubstrate 100 and an integrated chip (IC) 200. The substrate 100includes a plurality of patch antennas 110 a and 110 b, first groundmembers 115 a, 115 b, and 115 c, a plurality of first signal vias 120 aand 120 b, second ground members 125 a, 125 b, and 125 c, a plurality ofRF lines 130 a and 130 b, third ground members 135 a, 135 b, and 135 c,and a plurality of second signal vias 140 a and 140 b.

The plurality of patch antennas 110 a and 110 b radiate RF signalsgenerated from the IC 200, and may receive an external RF signal.

The first ground members 115 a, 115 b, and 115 c have a plurality offirst penetration regions surrounding each of the plurality of patchantennas 110 a and 110 b.

The plurality of first signal vias 120 a and 120 b transmit the RFsignals to the plurality of patch antennas 110 a and 110 b or receivethe RF signals from the plurality of patch antennas 110 a and 110 b.

The second ground members 125 a, 125 b, and 125 c have a plurality ofsecond penetration regions surrounding each of the plurality of firstsignal vias 120 a and 120 b.

The plurality of RF lines 130 a and 130 b transmit or receive RF signalsfrom the plurality of first signal vias 120 a and 120 b.

The third ground members 135 a, 135 b, and 135 c have a plurality ofthird penetration regions surrounding each of the plurality of firstsignal vias 120 a and 120 b.

The plurality of second signal vias 140 a and 140 b electrically connectthe plurality RF lines 130 a and 130 b and the IC 200 to transmit the RFsignals.

Here, each of the plurality of first penetration regions and theplurality of second penetration regions are larger than each of theplurality of patch antennas. Each of the plurality of third penetrationregions is smaller than each of the plurality of patch antennas 110 aand 110 b.

Accordingly, a plurality of cavities cavity1 and cavity2 is disposedbetween the plurality of patch antennas 110 a and 110 b and the thirdground members 135 a, 135 b, and 135 c. The plurality of cavitiescavity1 and cavity2 improves radiation characteristics (e.g., gain,loss, and directivity) of the plurality of patch antennas 110 a and 110b, and also reduces loss and interference of the plurality of RF lines130 a and 130 b and the plurality of second signal vias 140 a and 140 b.Therefore, the antenna-integrated RF module prevents deterioration inradiation characteristics and signal transmission efficiency of theantenna that may be due to a reduction in size when integrating anoperating environment from the IC 200 with the plurality of patchantennas 110 a and 110 b.

In one example, the distance between the plurality of patch antennas 110a and 110 b and the third ground members 135 a, 135 b, and 135 c is 0.15mm or more. That is, the distance of 0.15 mm is a value that isempirically obtained when a frequency of the RF signal is 28 GHz and adiameter of the patch antenna is 3 mm to 4 mm, and may be varieddepending on the frequency of the RF signal, the size of the patchantenna, or whether an additional configuration is included.

The substrate 100 has a structure in which any one or any combination ofany two or more of a first layer, a second layer, a second-second layer,a third layer, a fourth layer, a second-fourth layer, a fifth layer, asixth layer, and a seventh layer, to be described below, aresequentially disposed.

FIG. 2 is a view illustrating a first layer of a substrate of theantenna-integrated RF module in FIG. 1.

Referring to FIG. 2, a first layer of the substrate includes a firstpatch antenna 1101, a second patch antenna 1102, a third patch antenna1103, a fourth patch antenna 1104, a fifth patch antenna 1105, a sixthpatch antenna 1106, a seventh patch antenna 1107, an eighth patchantenna 1108, a ninth patch antenna 1109, a tenth patch antenna 1110, aneleventh patch antenna 1111, a twelfth patch antenna 1112, a thirteenthpatch antenna 1113, a fourteenth patch antenna 1114, a fifteenth patchantenna 1115, a sixteenth patch antenna 1116, first signal vias 1101 aand 1101 b, second signal vias 1102 a and 1102 b, third signal vias 1103a and 1103 b, fourth signal vias 1104 a and 1104 b, fifth signal vias1105 a and 1105 b, sixth signal vias 1106 a and 1106 b, seventh signalvias 1107 a and 1107 b, eighth signal vias 1108 a and 1108 b, ninthsignal vias 1109 a and 1109 b, tenth signal vias 1110 a and 1110 b,eleventh signal vias 1111 a and 1111 b, twelfth signal vias 1112 a and1112 b, thirteenth signal vias 1113 a and 1113 b, fourteenth signal vias1114 a and 1114 b, fifteenth signal vias 1115 a and 1115 b, sixteenthsignal vias 1116 a and 1116 b, and a first ground member 1120.

The first to sixteenth patch antennas 1101 to 1116 are arranged in a 4×4matrix, and each have a circular form. The diameter of the circular formis between 3 mm to 4 mm, but is not limited thereto.

The first to sixteenth signal vias 1101 a to 1116 b are connected to thefirst to sixteenth patch antennas 1101 to 1116, respectively, and eachpasses a transmission signal and a reception signal. That is, each ofthe first to sixteenth patch antennas 1101 to 1116 are connected to twosignal vias.

Positions of the first to sixteenth signal vias 1101 a to 1116 b areclose to edges of the first to sixteenth patch antennas 1101 to 1116,respectively. The orientations of some of the signal vias of adjacentpatch antennas in the periphery of the ground member form a right angle.Accordingly, interference between transmission signals and receptionsignals in each of the first to sixteenth patch antennas 1101 and 1116is reduced.

In addition, the orientations of the sixth signal vias 1106 a and 1106 band the seventh signal vias 1107 a and 1107 b are disposed parallel toeach other. The orientations of tenth signal vias 1110 a and 1111 b andthe eleventh signal vias 1111 a and 1110 b are disposed parallel to eachother. Accordingly, the movement path of the RF signal from the IC tothe patch antenna is shortened.

One of the first signal vias 1101 a and 1101 b is disposed at a positioncloser to the center of the first layer. The second signal vias 1102 aand 1102 b are disposed at the position closer to the center of thefirst layer. One of the third signal vias 1103 a and 1103 b is disposedat the position closer to the center of the first layer. One of thefourth signal vias 1104 a and 1104 b is disposed at the position closerto the center of the first layer. One of the fifth signal vias 1105 aand 1105 b is disposed at the position closer to the center of the firstlayer. The eighth signal vias 1108 a and 1108 b are disposed at theposition closer to the center of the first layer. The ninth signal vias1109 a and 1109 b are disposed at the position closer to the center ofthe first layer. One of the twelfth signal vias 1112 a and 1112 b isdisposed at the position closer to the center of the first layer. One ofthe thirteen signal vias 1113 a and 1113 b is disposed at the positioncloser to the center of the first layer. One of the fourteenth signalvias 1114 a and 1114 b is disposed at the position closer to the centerof the first layer. The fifteenth signal vias 1115 a and 1115 b aredisposed at the position closer to the center of the first layer. One ofthe sixteenth signal vias 1116 a and 1116 b is disposed at the positioncloser to the center of the first layer.

That is, one of the signal vias of the eight patch antennas (1101, 1103,1104, 1112, 1116, 1114, 1113, and 1105) at the periphery of the firstground member 1120 are disposed closer to the center of the first groundmember 1120, and the other signal via away from the center. Both signalvias of the remaining patch antennas (1102, 1108, 1115, 1109, 1106,1107, 1110, and 1111) are disposed closer to the center. Four patchantennas adjacent to vertexes among the first to sixteenth patchantennas 1101 to 1116 may include the signal vias all close to thecenter. Accordingly, the movement path of the RF signal from the IC tothe patch antenna is shortened, and the margin of space required forreducing interference of the RF signal is secured.

The first ground member 1120 has sixteen penetration regionscorresponding to the arrangement of the first to sixteenth patchantennas 1101 to 1116 so as to be spaced apart each from the other by apredetermined distance.

Depending on design, some of the first to sixteenth patch antennas 1101to 1116 may be omitted. For example, the first to sixteenth patchantennas 1101 to 1116 may be formed of fourth patch antennas.

FIG. 3 is a view illustrating a ground via group of a portion of thefirst layer of the substrate in FIG. 1.

Referring to FIG. 3, a first ground via group 1130 is connected to thefirst ground member 1120 and surrounds the sixteen penetration regions.Accordingly, radiation characteristics of the first to sixteenth patchantennas is improved, and a space between the first to sixteenth patchantennas and the third ground member has a three-dimensional shape.

The sixteen penetration regions may be filled with a non-conductivematerial.

FIG. 4 is a view illustrating a central region of a second layer of thesubstrate.

Referring to FIG. 4, the central region of the second layer of thesubstrate includes sixth signal vias 1206 a and 1206 b, seventh signalvias 1207 a and 1207 b, tenth signal vias 1210 a and 1210 b, eleventhsignal vias 1211 a and 1211 b, and a second ground member 1220.

The second layer of the substrate may include a first signal via, asecond signal via, a third signal via, a fourth signal via, a fifthsignal via, sixth signal vias 1206 a and 1206 b, seventh signal vias1207 a and 1207 b, an eighth signal via, a ninth signal via, tenthsignal vias 1210 a and 1210 b, eleventh signal vias 1211 a and 1211 b, atwelfth signal via, a thirteenth signal via, a fourteenth signal via, afifteenth signal via, a sixteenth signal via, and a second ground member1220.

The first to sixteenth signal vias are connected to the first tosixteenth signal vias disposed on the first layer of the substrate andare disposed at the sixteenth penetration regions to pass one of thetransmission signal and the reception signal.

The second ground member 1220 surrounds the first to sixteenth signalvias, respectively.

FIG. 5 is a view illustrating a ground via group of a portion of thesecond layer of the substrate.

Referring to FIG. 5, a second ground via group 1230 is connected to thesecond ground member 1220 and surrounds the sixteen penetration regions,which improves the radiation characteristics of the first to sixteenthpatch antennas. A space between the first to sixteenth patch antennasand the third ground member has a three-dimensional shape.

FIG. 6 is a view illustrating a central region of a second-second layerof the substrate.

Referring to FIG. 6, the central region of the second-second layer ofthe substrate includes sixth signal vias 1306 a and 1306 b, seventhsignal vias 1307 a and 1307 b, tenth signal vias 1310 a and 1310 b,eleventh signal vias 1311 a and 1311 b, and a second-second groundmember 1320.

The second-second layer of the substrate may include a first signal via,a second signal via, a third signal via, a fourth signal via, a fifthsignal via, sixth signal vias 1306 a and 1306 b, seventh signal vias1307 a and 1307 b, an eighth signal via, a ninth signal via, tenthsignal vias 1310 a and 1310 b, eleventh signal vias 1311 a and 1311 b, atwelfth signal via, a thirteenth signal via, a fourteenth signal via, afifteenth signal via, a sixteenth signal via, and a second-second groundmember 1320.

The first to sixteenth signal vias are connected to the first tosixteenth signal vias disposed on the second layer of the substrate, andare disposed at the sixteenth penetration regions to pass one of thetransmission signal and the reception signal.

The second-second ground member 1320 has a plurality of penetrationregions surrounding the first to sixteenth signal vias, respectively,and includes a second-second ground via group surrounding the pluralityof penetration regions, respectively. Accordingly, radiationcharacteristics of the first to sixteenth patch antennas is improved. Aspace between the first to sixteenth patch antennas and the third groundmember has a more three-dimensional shape.

In addition, since the second-second ground member 1320 extends a spaceddistance between the first to sixteenth patch antennas and the thirdground member, the second-second ground member 1320 improves radiationcharacteristics of the first to sixteenth patch antennas.

FIG. 7 is a view illustrating a central region of a third layer of thesubstrate.

Referring to FIG. 7, the central region of the third layer of thesubstrate includes sixth signal vias 1406 a and 1406 b, seventh signalvias 1407 a and 1407 b, tenth signal vias 1410 a and 1410 b, eleventhsignal vias 1411 a and 1411 b, and a third ground member 1420.

The third layer of the substrate may include a first signal via, asecond signal via, a third signal via, a fourth signal via, a fifthsignal via, sixth signal vias 1406 a and 1406 b, seventh signal vias1407 a and 1407 b, an eighth signal via, a ninth signal via, tenthsignal vias 1410 a and 1410 b, eleventh signal vias 1411 a and 1411 b, atwelfth signal via, a thirteenth signal via, a fourteenth signal via, afifteenth signal via, a sixteenth signal via, and a third ground member1420.

The first to sixteenth signal vias are connected to the first tosixteenth signal vias disposed on the second-second layer of thesubstrate and pass one of the transmission signal and the receptionsignal.

The third ground member 1420 is disposed on almost all regions exceptfor the positions of the first to sixteenth signal vias in the thirdlayer of the substrate. That is, the third ground member 1420 is alsodisposed at regions corresponding to the positions of the first tosixteenth patch antennas.

The third ground member 1420 reduces electromagnetic influence of thefirst to sixteenth patch antennas on fourth to seventh layers of thesubstrate during a radiation operation, and also provides a distancebetween the third ground member 1420 and the first to sixteenth patchantennas.

In addition, the third ground member 1420 has a plurality of penetrationregions surrounding the first to sixteenth signal vias, respectively,and includes a third ground via group surrounding the plurality ofpenetration regions, respectively.

The third ground via group surrounds the regions corresponding to thepositions of the first to sixteenth patch antennas. Accordingly,radiation characteristics of the first to sixteenth patch antennas isimproved. The space between the first to sixteenth patch antennas andthe third ground member may have a more three-dimensional shape.

In addition, the third ground via group also surround regionscorresponding to RF lines disposed on the fourth layer of the substrate.Accordingly, interference of the first to sixteenth patch antennas withthe RF lines in the radiation operation is reduced.

FIG. 8 is a view illustrating a central region of a fourth layer of thesubstrate.

Referring to FIG. 8, the central region of the fourth layer of thesubstrate includes sixth RF lines 1506 a and 1506 b, seventh RF lines1507 a and 1507 b, tenth RF lines 1510 a and 1510 b, eleventh RF lines1511 a and 1511 b, and a fourth ground member 1520.

The fourth layer of the substrate may include a first RF line, a secondRF line, a third RF line, a fourth RF line, a fifth RF line, sixth RFlines 1506 a and 1506 b, seventh RF lines 1507 a and 1507 b, an eighthRF line, a ninth RF line, tenth RF lines 1510 a and 1510 b, eleventh RFlines 1511 a and 1511 b, a twelfth RF line, a thirteenth RF line, afourteenth RF line, a fifteenth RF line, a sixteenth RF line, and afourth ground member 1520.

The first to sixteenth RF lines are connected to the first to sixteenthsignal vias disposed on the third layer of the substrate and pass one ofthe transmission signal and the reception signal.

The first to sixteenth RF lines concentrate or disperse RF signals fromthe central regions in the regions corresponding to the positions of thefirst to sixteenth patch antennas.

FIG. 9 is a view illustrating a ground via group of the fourth layer ofthe substrate.

Referring to FIG. 9, a first RF line 1501 a is designed to reduce lossof the RF signals by reducing the electrical distance between the firstsignal via disposed on the third layer and a first signal via disposedon a fifth layer of the substrate, and to reduce interference to the RFsignals by securing an arrangement space of the fourth ground via group1530. The positions of the first to sixteenth signal vias disposed onthe first to third layers of the substrate are determined in terms ofsignificantly reducing lengths of the first to sixteenth RF lines andsecuring the arrangement space of the fourth ground via group 1530.

In addition, the fourth group via group 1530 surrounds the first tosixteenth RF lines, respectively. Accordingly, interference of the firstto sixteenth patch antennas with the RF lines in the radiation operationis reduced.

FIG. 10 is a view illustrating a central region of a second-fourth layerof the substrate.

Referring to FIG. 10, the central region of the second-fourth layer ofthe substrate includes sixth signal vias 1606 a and 1606 b, seventhsignal vias 1607 a and 1607 b, tenth signal vias 1610 a and 1610 b,eleventh signal vias 1611 a and 1611 b, and a second-fourth groundmember 1620.

The second-fourth layer of the substrate may include a first signal via,a second signal via, a third signal via, a fourth signal via, a fifthsignal via, sixth signal vias 1606 a and 1606 b, seventh signal vias1607 a and 1607 b, an eighth signal via, a ninth signal via, tenthsignal vias 1610 a and 1610 b, eleventh signal vias 1611 a and 1611 b, atwelfth signal via, a thirteenth signal via, a fourteenth signal via, afifteenth signal via, a sixteenth signal via, and a second-fourth groundmember 1620.

The first to sixteenth signal vias are connected to the first tosixteenth RF lines disposed on the fourth layer of the substrate andpass one of the transmission signal and the reception signal.

The second-fourth ground member 1620 has a plurality of penetrationregions surrounding the first to sixteenth signal vias, respectively,and surrounds the regions corresponding to the RF lines disposed on thefourth layer of the substrate. Accordingly, interference to the RF linesis reduced.

FIG. 11 is a view illustrating a fifth layer of the substrate in FIG. 1.

Referring to FIG. 11, the fifth layer of the substrate includes a signalvia region 1710, a fifth ground member 1720, a first power member 1741,a second power member 1742, a third power member 1743, a fourth powermember 1744, a first analog ground member 1750, and a fifth power groundmember 1760.

The signal via region 1710 includes a plurality of signal vias connectedto the first to sixteenth signal vias disposed on the second-fourth ofthe substrate. The signal via region 1710 corresponds to an arrangementregion of the IC.

The first, second, third, and fourth power members 1741, 1742, 1743, and1744 provide power, and are disposed on a region corresponding to aregion on which passive elements are disposed, of a surface of thesubstrate on which the IC is disposed. Accordingly, the first, second,third, and fourth power members 1741, 1742, 1743, and 1744 providestable power to the IC.

The first analog ground member 1750 is electrically disconnected fromthe fifth ground member 1720, and reduces electromagnetic influence ofan analog line of a sixth layer of the substrate on the power and the RFsignals.

The fifth power ground member 1760 is electrically disconnected from thefifth ground member 1720, and protects some of the lines connected tothe first, second, third, and fourth power members 1741, 1742, 1743, and1744 from the RF signals.

That is, the antenna-integrated RF module according to an examplereduces interference between the RF signals and the power, and an analogsignal by having a structure in which a plurality of ground regions,electrically disconnected from each other, are disposed together on onelayer.

FIG. 12 is a view illustrating a sixth layer of the substrate.

Referring to FIG. 12, a sixth layer of the substrate includes a signalvia region 1810, a sixth ground member 1820, an analog line 1850, and asixth power ground member 1860.

The signal via region 1810 includes a plurality of signal vias connectedto the first to sixteenth signal vias disposed on the fifth layer of thesubstrate. The signal via region 1810 corresponds to an arrangementregion of the IC.

The analog line 1850 is electrically disconnected from the sixth groundmember 1820, and disposed between the first and second analog groundmembers. Accordingly, electromagnetic influence of the analog line 1850on the power and the RF signals is reduced. The analog line 1850 iselectrically connected to the IC through the analog via, and may passthe analog signal.

The sixth power ground member 1860 is electrically disconnected from thesixth ground member 1820, and reduces an influence of switching noisebased on an on-off operation of a semiconductor switch of a DC-DCconverter on the power and RF signals. The DC-DC converter may beembedded in the IC or may be disposed outside of the substrate.

FIG. 13 is a view illustrating a seventh layer of the substrate.

Referring to FIG. 13, a seventh layer of the substrate includes a signalvia region 1910, a seventh ground member 1920, a second analog groundmember 1950, and a seventh power ground member 1960.

The signal via region 1910 includes a plurality of signal vias connectedto the first to sixteenth signal vias disposed on the sixth layer of thesubstrate. The signal via region 1910 may correspond to an arrangementregion of the IC.

The second analog ground member 1950 is electrically disconnected fromthe seventh ground member 1920, and reduces electromagnetic influence ofthe analog line of the sixth layer of the substrate on the power and theRF signals.

The seventh power ground member 1960 is electrically disconnected fromthe seventh ground member 1920, and reduces an influence of switchingnoise due to the on-off operation of the semiconductor switch of a DC-DCconverter on the power and RF signals.

FIG. 14 is a view illustrating a surface of the substrate on which an ICis disposed.

Referring to FIG. 14, a surface of the substrate on which the IC isdisposed includes a signal via region 2010, an eighth ground member2020, a first trench 2100, a second trench 2200, and passive elements2300 a and 2300 b.

The signal via region 2010 includes a plurality of signal vias connectedto the first to sixteenth signal vias disposed on the seventh layer ofthe substrate, and may provide an arrangement space of the IC.

The first trench 2100 is disposed to surround the signal via region2010. The first trench 2100 reduces a negative influence of an adhesivesolution used in an operation of bonding the IC to the substrate on thepassive element 2300.

The second trench 2200 is disposed to surround the passive element 2300.The second trench 2200 reduces a negative influence of the adhesivesolution used in an operation of bonding a sub-substrate to thesubstrate on the passive element 2300.

The passive element 2300 provides capacitance to the power supply andthe ground of the substrate, and includes a multilayer ceramic capacitor(MLCC).

The surface of the substrate on which the IC is disposed may furtherinclude a plurality of external terminals electrically connected to thesub-substrate. That is, the plurality of external terminals may receivea predetermined voltage, power, or signal from the outside of thesubstrate. The plurality of external terminals may be electricallyconnected to the IC, and may be electrically connected to the analogline, the power member, and/or the power ground member.

FIG. 15 is a view illustrating an arrangement of a sub-substrate.

Referring to FIG. 15, an antenna-integrated RF module according to anexample includes a substrate 1000, an IC 2000, and sub-substrates 3000.

A horizontal length and a vertical length of the substrate 1000 are eachbe 21.4 mm, but are not limited thereto.

The IC 2000 generates and processes an RF signal having a frequency ofseveral tens to several hundred GHz.

The sub-substrate 3000 has a height greater than a height of the IC 2000to protect the IC 2000 from external impact, and is electricallyconnected to the substrate 1000 through solder balls 3100 to be suppliedby external power or signal to the substrate 1000 and the IC 2000.

In addition, a molding may be disposed between the sub-substrates 3000to protect the IC 2000.

As set forth above, according to the examples in the present disclosure,the antenna-integrated RF module prevents deterioration in radiationcharacteristics and signal transmission efficiency of the antenna due toa reduction in size when reducing the overall size by integrating theoperating environment from the integrated chip (IC) with the antenna,and may reduce loss and interference in the case in which the signals ofthe frequency of several tens to several hundred GHz are transmittedbetween the IC and the antenna.

While this disclosure includes specific examples, it will be apparentafter an understanding of the disclosure of this application thatvarious changes in form and details may be made in these exampleswithout departing from the spirit and scope of the claims and theirequivalents. The examples described herein are to be considered in adescriptive sense only, and not for purposes of limitation. Descriptionsof features or aspects in each example are to be considered as beingapplicable to similar features or aspects in other examples. Suitableresults may be achieved if the described techniques are performed in adifferent order, and/or if components in a described system,architecture, device, or circuit are combined in a different manner,and/or replaced or supplemented by other components or theirequivalents. Therefore, the scope of the disclosure is defined not bythe detailed description, but by the claims and their equivalents, andall variations within the scope of the claims and their equivalents areto be construed as being included in the disclosure.

What is claimed is:
 1. An antenna-integrated radio frequency (RF)module, comprising: a multilayer substrate; an integrated chip (IC)disposed on an outer surface of the multilayer substrate, and configuredto generate a transmission signal and a reception signal; patch antennasdisposed on a first layer of the multilayer substrate; firsttransmission vias electrically connected to the patch antennas,respectively; first reception vias electrically connected to the patchantennas, respectively; transmission lines electrically connected to thefirst transmission vias, respectively; reception lines electricallyconnected to the first reception vias, respectively, and separated fromthe transmission lines; second transmission vias electrically connectedbetween the IC and the transmission lines, respectively; secondreception vias electrically connected between the IC and the receptionlines, respectively; a first ground member disposed between the patchantennas and the transmission lines or the reception lines, and havingfirst penetration regions surrounding the first transmission vias andthe first reception vias, respectively.
 2. The antenna-integrated RFmodule of claim 1, further comprising a first ground via groupelectrically connected to the first ground member, and surrounding thetransmission lines and reception lines, respectively.
 3. Theantenna-integrated RF module of claim 2, further comprising a secondground member having second penetration regions surrounding thetransmission lines and the reception lines, respectively, andelectrically connected to the first ground via group.
 4. Theantenna-integrated RF module of claim 3, further comprising: a thirdground member having third penetration regions surrounding the secondtransmission vias and the second reception vias, respectively; and asecond ground via group electrically connected between the second groundmember and the third ground member, and surrounding the transmissionlines and reception lines, respectively.
 5. The antenna-integrated RFmodule of claim 1, further comprising a third ground member having thirdpenetration regions surrounding the second transmission vias and thesecond reception vias, respectively.
 6. The antenna-integrated RF moduleof claim 5, further comprising a second ground member having secondpenetration regions surrounding the transmission lines and the receptionlines, respectively.
 7. The antenna-integrated RF module of claim 1,further comprising a sub-substrate disposed on the outer surface of themultilayer substrate to surround the IC, wherein the sub-substratecomprises solder balls electrically connecting between the IC and thesub-substrate.
 8. The antenna-integrated RF module of claim 7, furthercomprising a passive element disposed between the sub-substrate and theIC, wherein the outer surface of the multilayer substrate has a firsttrench disposed to surround the IC, and a second trench disposed tosurround the first trench and surrounded by the sub-substrate.
 9. Theantenna-integrated RF module of claim 7, wherein the IC converts signalsreceived through the solder balls into the transmission signal of amillimeter wave (mmWave) band.